High performance GaAsSb∕GaAs quantum well lasers

Quantum well and quantum dot lasers: From strained-layer and self-organized epitaxy to high-performance devices

Strained heterostructures are now widely used to realize high-performance lasers. Highly mismatched epitaxy also produces defect-free quantum dots via an island growth mode. The characteristics of high-speed strained quantum well and quantum dot lasers are described. It is seen that substantial improvements in small-signal modulation bandwidth are obtained in both 1 lm (48 GHz) and 1.55 lm (26 ...

Electron transport in AlGaInP quantum well lasers

Two-dimensional simulation of quantum well lasers

We describe a two-dimensional model for quantum-well lasers that solves self-consistently the electrical and optical equations. The model includes a wavelengthand position-dependent gain function which is derived from a quantum-mechanical calculation. We have also incorporated the effects of strain into the model, through an anisotropic parabolic band approximation of the band structure from a ...

Energy storage in quantum-well lasers.

A new scheme of energy storage in single-quantum-well semiconductor lasers is analyzed. This scheme involves the storage of the majority of injected carriers in the continuum states of the surrounding bulk material, in which the carrier density is diluted and the higher-order carrier-density-dependent recombination processes are much smaller. This allows the inversion level to build up to a muc...

High Performance Quantum Cascade Lasers Based on Three- Phononresonance Design